Embedded Files
2025
74.
Laser-Induced Recrystallization for Enhanced Red Emission in InGaN/GaN Nanowires: A Path Toward High-Efficiency Micro-Displays
Dae-Young Um, Yong-Ho Kim, Bagavath Chandran, Jeong-Kyun Oh, Sung-Un Kim, Sang-Wook Lee, Min-Seok Lee, Se-Bee Shin, Cheul-Ro Lee , Yong-Ho Ra*
ACS Nano, 2025, Sumitted. [Link] IF 15.8
73.
Solar-Driven Seawater Splitting Enabled by Band-Engineered GO-Sheathed GaN Nanorods
Jeong-Kyun Oh, Sang-Wook Lee, Chandran Bagavath, Sung-Un Kim, Dae-Young Um, Rangaswamy Navamathavan, Cheul-Ro Lee , Yong-Ho Ra*
Applied Catalysis B-Environment and Energy , 2025, Sumitted. [Link] IF 20.3
72.
Chandran Bagavath, Jeong-Kyun Oh, Sang-Wook Lee, Dae-Young Um, Sung-Un Kim, Cheul-Ro Lee, Yong-Ho Ra*
Nature catalysis, 2025, Under review. [Link] IF 42.8
71.
Sung-Un Kim, Min-Seok Lee, Vignesh Veeramuthu, Jeong-Kyun Oh, Eun-A Hong, Ja-Yeon Kim , Yong-Ho Ra*
Materials Today, 2025, Under review. [Link] IF 21.1
70.
A Vertical-emitting Single Nanowire Lasing Pixel for Ultra-Resolution Near-Eye Displays
Dae-Young Um, Sung-Un Kim, Vignesh Veeramuthu, Bagavath Chandran, Jeong-Kyun Oh, Yong-Ho Kim, Cheul-Ro Lee, Yong-Ho Ra*
Light: Science & Applications, 2025, Under review. [Link] IF 20.6
69.
Atomic-Scale Field-Localized Semiconductor Nanoantenna for Quantum Photonics
Sung-Un Kim, Vignesh Veeramuthu, Min-Seok Lee, Ja-Yeon Kim, Jeong-Kyun Oh, Se-bee Shin, Yong-Ho Ra*
Applied Physics Letters, 2025, Under review. [Link] IF 3.5
2024
68.
Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology
Veeramuthu Vignesh, Sung-Un Kim, Sang-Wook Lee, R Navamathavan, Chandran Bagavath, Dae-Young Um, Jeong-Kyun Oh, Min-Seok Lee, Yong-Ho Kim, Cheul-Ro Lee, Yong-Ho Ra*
National Science Review, 2024, doi.org/10.1093/nsr/nwae306. [Link] IF 16.3
67.
Solar-Driven Sustaninability: III-V Semiconductor for Green Energy Production Technologies
Bagavath Chandran†, Jeong-Kyun Oh†, Sang-Wook Lee, Dae-Young Um, Sung-Un Kim, Veeramuthu Vignesh, Jin-Seo Park, Shuo Han, Cheul-Ro LEE, Yong-Ho Ra*
Nano-Micro Letters, 2024, doi : 10.1007/s40820-024-01412-6 [Link] IF 31.6
66.
Low-Leakage Current Core-Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band
Jeong-Kyun Oh†, Dae-Young Um†, Bagavath Chandran†, Sung-Un Kim, Cheul-Ro LEE*, Yong-Ho Ra*
ACS Appl. Mater. Interfaces, 2024, doi : 10.1021/acsami.3c17356 [Link] IF 9.5
65.
III-nitride nanowires for emissive display technology
Veeramuthu Vignesh, Yuanpeng Wu, Sung-Un Kim, Jeong-Kyun Oh, Chandran Bagavath, Dae-Young Um, Zetian Mi, Yong-Ho Ra*
Journal of Information Display, 2024, doi : 10.1080/15980316.2023.2282937 [Link] IF 3.7
2023
64.
Recent advances in cerium oxide-based nanocomposites in synthesis, characterization, and energy storage applications: A comprehensive review
K Kowsuki, R Nirmala, Yong-Ho Ra*, R Navamathavan
Results in Chemistry, 2023, doi : 10.1016/j.rechem.2023.100877 [Link] IF 2.5
63.
Sub-micron monolithic full-color nanorod LEDs on a single substrate
Sung-Un Kim, Jeong-Kyun Oh, Dae-Young Um, Bagavath Chandran, Cheul-Ro Lee, Yong-Ho Ra*
IEEE Photonics Journal, 2023, doi : 10.1109/JPHOT.2023.3236014 [Link] IF 2.4
62.
Structural Engineering in a Microscale Laser Diode with InGaN Tunnel-Junction Nanorods
Sung-Un Kim, Dae-Young Um, Jeong-Kyun Oh, Bagavath Chandran, Cheul-Ro Lee, Yong-Ho Ra*
ACS Photonics, 2023, doi : 10.1021/acsphotonics.3c00132 [Link] IF 7.0
61.
External catalyst-free InGaN photoelectrode for highly efficient energy conversion and H2 generation
Dae-Young Um, Bagavath Chandran, Jeong-Kyun Oh, Sung-Un Kim, Yeon-Tae Yu, Ji-Hyeon Park, Cheul-Ro Lee, Yong-Ho Ra*
Chemical Engineering Journal, 2023, doi : 10.1016/j.cej.2023.144997 [Link] IF 15.1
60.
New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector
Dae‐Young Um, Bagavath Chandran, Ji‐Yeon Kim, Jeong‐Kyun Oh, Sung‐Un Kim, Jong Uk An, Cheul‐Ro Lee, Yong‐Ho Ra*
Advanced Functional Materials, 2023, doi : 10.1002/adfm.202306143 [Link] IF 19.0
59.
Factors influencing the pyrolysis products of waste tyres and its practical applications: a mini topical review
S Sathish, R Nirmala, Yong–Ho Ra*, R Navamathavan
Journal of Material Cycles and Waste Management, 2023, doi : 10.1007/s10163-023-01758-w [Link]
IF 3.1
2022
58.
Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption
Zhang Xing, Afroja Akter, Hyun S Kum, Yongmin Baek, Yong-Ho Ra*, Geonwook Yoo, Kyusang Lee, Zetian Mi, Junseok Heo
Scientific reports, 2022, doi : 10.1038/s41598-022-08323-9 [Link] IF 4.38
2021
57.
Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures
Dae-Young Um, Yong-Ho Ra*, Ji-Hyeon Park, Ga-Eun Hong, Cheul-Ro Lee
Nanoscale Advances, 2021, doi : 10.1039/D1NA00338K [Link] IF 5.59
56.
Monolithic Light Reflector‐Nanowire Light Emitting Diodes
Yong-Ho Ra*, Cheul-Ro Lee
Advanced Materials Technologies, 2021, doi : 10.1002/admt.202000885 [Link] IF 8.85
55.
Ultracompact display pixels: Tunnel junction nanowire photonic crystal laser
Yong-Ho Ra*, Cheul-Ro Lee
Nano Energy, 2021, doi : 10.1016/j.nanoen.2021.105870 [Link] IF 19.06
2020
54.
An electrically pumped surface-emitting semiconductor green laser
Yong-Ho Ra*, Roksana Tonny Rashid, Xianhe Liu, Sharif Md Sadaf, Kishwar Mashooq, Zetian Mi
Science Advances, 2020, doi : 10.1126/sciadv.aav7523 [Link] IF 14.98
53.
Core–shell tunnel junction nanowire white-light-emitting diode
Yong-Ho Ra*, Cheul-Ro Lee
Nano Letters, 2020, doi : 10.1021/acs.nanolett.0c00420 [Link] IF 11.23
52.
Submicron full‐color LED pixels for microdisplays and micro‐LED main displays
Xianhe Liu, Yuanpeng Wu, Yakshita Malhotra, Yi Sun, Yong‐Ho Ra*, Renjie Wang, Matthew Stevenson, Seth Coe‐Sullivan, Zetian Mi
Journal of the Society for Information Display, 2020, doi : 10.1002/jsid.899 [Link] IF 2.14
51.
Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells
Shaobo Cheng, Zewen Wu, Brian Langelier, Xianghua Kong, Toon Coenen, Sangeetha Hari, Yong‐Ho Ra*, Roksana Tonny Rashid, Alexandre Pofelski, Hui Yuan, Xing Li, Zetian Mi, Hong Guo, Gianluigi A Botton
Advanced Optical Materials, 2020, doi : 10.1002/adom.202000481 [Link] IF 10.05
50.
Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures
Sung-Un Kim, Yong-Ho Ra*
Nanomaterials, 2020, doi : 10.3390/nano11010009 [Link] IF 5.07
2019
49.
Structural and electrical characterization of monolithic core–double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy
SM Sadaf, Y-H Ra*, S Zhao, T Szkopek, Z Mi
Nanoscale, 2019, doi : 10.1039/C9NR00081J [Link] IF 7.79
48.
Structural origin of the high-performance light-emitting InGaN/AlGaN quantum disks
Shaobo Cheng, Brian Langelier, Yong-Ho Ra*, Roksana Tonny Rashid, Zetian Mi, Gianluigi A Botton
Nanoscale, 2019, doi : 10.1039/C9NR01262A [Link] IF 7.79
47.
Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy
Hoki Son, Ye-Ji Choi, Young-Jin Lee, Jin-Ho Kim, Sun Woog Kim, Yong-Ho Ra*, Tae-Young Lim, Jonghee Hwang, Dae-Woo Jeon
Journal of the Korean Crystal Growth and Crystal Technology, 2019, doi : 10.6111/JKCGCT.2019.29.4.173 [Link] IF 0.3
46.
High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy
Soyeon An, Dae-Woo Jeon, Jonghee Hwang, Yong-Ho Ra*
Journal of the Korean Crystal Growth and Crystal Technology, 2019, doi : 10.6111/JKCGCT.2019.29.4.143 [Link] IF 0.3
45.
The properties of glass ceramic of LAS system with Y2O3 and Fe2O3
Ji-Sun Lee, Tae-Young Lim, Jonghee Hwang, Youngjin Lee, Dae-Woo Jeon, Sun-Woog Kim, Yong-Ho Ra*, Jin-Ho Kim
Journal of the Korean Crystal Growth and Crystal Technology, 2019, doi : 10.6111/JKCGCT.2019.29.4.154 [Link] IF 0.3
44.
The properties of optical glass of BaO-GeO2-La2O3 system with ZnO
Ji-Sun Lee, Tae-Young Lim, Jonghee Hwang, Youngjin Lee, Dae-Woo Jeon, Sun-Woog Kim, Yong-Ho Ra*, Jin-Ho Kim
Journal of the Korean Crystal Growth and Crystal Technology, 2019, doi : 10.6111/JKCGCT.2019.29.5.208 [Link] IF 0.3
43.
Properties of Glass Melting Using Recycled Refused Coal Ore
Ji-Sun Lee, Sun-Woog Kim, Yong-Ho Ra*, Youngjin Lee, Tae-Young Lim, Jonghee Hwang, Dae-Woo Jeon, Jin-Ho Kim
Korean Journal of Materials Research, 2019, doi : 10.3740/MRSK.2019.29.11.727 [Link] IF 0.3
42.
The properties of glass ceramic of LAS system with Y2O3 and Fe2O3
Tae-Young Lim, Jonghee Hwang, Young Jin Lee, Dae-Woo Jeon, Sun Woog Kim, Yong-Ho Ra*, Jinho Kim
Journal of the Korean Crystal Growth and Crystal Technology, 2019, doi : [Link] IF 0.3
41.
Optically invariant InGaN nanowire light-emitting diodes on flexible substrates under mechanical manipulation
Mohsen Asad, Renjie Wang, Yong-Ho Ra*, Pranav Gavirneni, Zetian Mi, William S Wong
npj Flexible Electronics, 2019, doi : 10.1038/s41528-019-0059-z [Link] IF 14.6
40.
Understanding the p-type GaN nanocrystals on InGaN nanowire heterostructures
Yong-Ho Ra*, Cheul-Ro Lee
ACS Photonics, 2019, doi : 10.1021/acsphotonics.9b01035 [Link] IF 7.14
2018
39.
Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy
Hoki Son, Ye-Ji Choi, Young-Jin Lee, Mi-Jai Lee, Jin-Ho Kim, Sun Woog Kim, Yong-Ho Ra*, Tae-Young Lim, Jonghee Hwang, Dae-Woo Jeon
Journal of the Korean Crystal Growth and Crystal Technology, 2018, doi : 10.6111/JKCGCT.2018.28.3.135 [Link] IF 0.3
38.
The properties of glass ceramics of Li2O-Al2O3-SiO2 system according to nucleation agent
Hyun-Wook Park, Ji-Sun Lee, Tae-Young Lim, Jonghee Hwang, Yong-Ho Ra*, Myoung-Rae Noh, Kwan-Hee Seo, Jin-Ho Kim
Journal of the Korean Crystal Growth and Crystal Technology, 2018, doi : 10.6111/JKCGCT.2018.28.6.229 [Link] IF 0.3
36.
Nanoscale Relative Emission Efficiency Mapping Using Cathodoluminescence g(2) Imaging
Sophie Meuret, Toon Coenen, Steffi Y Woo, Yong-Ho Ra*, Zetian Mi, Albert Polman
Nano Letters, 2018, doi : 10.1021/acs.nanolett.7b04891 [Link] IF 12.28
35.
Ultraviolet light‐emitting diode using nonpolar AlGaN core–shell nanowire heterostructures
Yong‐Ho Ra*, San Kang, Cheul‐Ro Lee
Advanced Optical Materials, 2018, doi : 10.1002/adom.201701391 [Link] IF 8.28
34.
Hierarchical InGaN Nanowires for High-Efficiency Solar Water Splitting
Jiseok Gim, Reed Yalisove, Sheng Chu, Yongbum Park, Srinivas Vanka, Yichen Wang, Yongjie Wang, Yong-Ho Ra*, Hong Guo, Ishiang Shih, Zetian Mi, Robert Hovden
Microscopy and Microanalysis, 2018, doi : 10.1017/S1431927618008838 [Link] IF 4.12
33.
Efficient coupling of disorder states to excitons in an InGaN nanostructure
Cameron Nelson, Yong-Ho Ra*, Zetian Mi, Duncan G Steel
Physical Review B, 2018, doi : 10.1103/PhysRevB.98.081201 [Link] IF 4.03
2017
32.
Growth of hierarchical GaN nanowires for optoelectronic device applications
Rishabh Raj, Veeramuthu Vignesh, Yong-Ho Ra*, Rajkumar Nirmala, Cheul-Ro Lee, Rangaswamy Navamathavan
Journal of Photonics for Energy, 2017, doi : 10.1117/1.JPE.7.016001 [Link] IF 2.27
31.
An AlGaN core–shell tunnel junction nanowire light-emitting diode operating in the ultraviolet-C band
SM Sadaf, S Zhao, Y Wu, Y-H Ra*, X Liu, S Vanka, Z Mi
Nano letters, 2017, doi : 10.1021/acs.nanolett.6b05002 [Link] IF 12.08
30.
Sub-ueV decoherence-induced population pulsation resonances in an InGaN system
Cameron Nelson, Yong-Ho Ra*, Zetian Mi, Paul Berman, Duncan G Steel
Physical Review B, 2017, doi : 10.1103/PhysRevB.96.115302 [Link] IF 3.81
29.
Scalable nanowire photonic crystals: Molding the light emission of InGaN
Yong‐Ho Ra*, Roksana Tonny Rashid, Xianhe Liu, Jaesoong Lee, Zetian Mi
Advanced Functional Materials, 2017, doi : 10.1002/adfm.201702364 [Link] IF 15.6
2016
28.
Monolithically integrated metal/semiconductor tunnel junction nanowire light-emitting diodes
SM Sadaf, YH Ra*, T Szkopek, Z Mi
Nano Letters, 2016, doi : 10.1021/acs.nanolett.5b04215 [Link] IF 12.71
27.
Full-color single nanowire pixels for projection displays
Yong-Ho Ra*, Renjie Wang, Steffi Y Woo, Mehrdad Djavid, Sharif Md Sadaf, Jaesoong Lee, Gianluigi A Botton, Zetian Mi
Nano Letters, 2016, doi : 10.1021/acs.nanolett.6b01929 [Link] IF 12.71
2015
26.
Alternating-current InGaN/GaN tunnel junction nanowire white-light emitting diodes
SM Sadaf, Y-H Ra*, HPT Nguyen, M Djavid, Z Mi
Nano Letters, 2015, doi : 10.1021/acs.nanolett.5b02515 [Link] IF 13.78
2014
25.
Non-polar InGaN quantum dots grown on the m-plane of n-GaN nanowires by a self-catalyst method using metal organic chemical vapor deposition
Hee-Il Yoo, Yong-Ho Ra*, R Navamathavan, Yong-Hyun Choi, Ji-Hyeon Park, Cheul-Ro Lee
CrystEngComm, 2014, doi : 10.1039/C4CE00743C [Link] IF 4.03
24.
Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m-and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition
Yong-Ho Ra*, Rangaswamy Navamathavan, San Kang, Cheul-Ro Lee
Journal of Materials Chemistry C, 2014, doi : 10.1039/C3TC32212B [Link] IF 5.7
23.
Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD
Ji-Hyeon Park, Suthan Kissinger, Yong Ho Ra*, Kang San, Min Ji Park, Kyung-Hwa Yoo, Cheul-Ro Lee
Journal of Nanomaterials, 2014, doi : 10.1155/2014/951360 [Link] IF 3.8
22.
Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition
Yong-Ho Ra*, Rangaswamy Navamathavan, Hee-Il Yoo, Cheul-Ro Lee
Nano Letters, 2014, doi : 10.1021/nl404794v [Link] IF 13.59
2013
21.
Radial growth behavior and characteristics of m-plane In 0.16 Ga 0.84 N/GaN MQW nanowires by MOCVD
Yong-Ho Ra*, R Navamathavan, Ji-Hyeon Park, Cheul-Ro Lee
CrystEngComm, 2013, doi : 10.1039/C2CE26842F [Link] IF 3.86
20.
High-Quality Uniaxial InxGa1–xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication
Yong-Ho Ra*, R Navamathavan, Ji-Hyeon Park, Cheul-Ro Lee
ACS Applied Materials & Interfaces, 2013, doi : 10.1021/am303056v [Link] IF 6.72
19.
Electrical and optical properties of a high-voltage large area blue light-emitting diode
Wang Wang, Wei Wei, Cai Cai, Yong Yong*, Huang Huang, Li Li, Hai-ou Hai-ou, Zhang Zhang, Bao-shun Bao-shun
Japanese Journal of Applied Physics, 2013, doi : 10.7567/JJAP.52.08JG08 [Link] IF 1.5
18.
Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes
Yong-Ho Ra*, R Navamathavan, Ji-Hyeon Park, Cheul-Ro Lee
Nano Letters, 2013, doi : 10.1021/nl400906r [Link] IF 12.94
2012
17.
Growth characteristics of uniaxial InGaN/GaN MQW/n-GaN nanowires on Si (111) using MOCVD
Yong-Ho Ra*, R Navamathavan, Cheul-Ro Lee
CrystEngComm, 2012, doi : 10.1039/C2CE26281A [Link] IF 3.88
16.
Growth behavior of GaN epilayers on Si (111) grown by GaN nanowires assisted epitaxial lateral overgrowth
Bo-Ra Yeom, R Navamathavan, Ji-Hyeon Park, Yong-Ho Ra*, Cheul-Ro Lee
CrystEngComm, 2012, doi : 10.1039/C2CE25142F [Link] IF 3.88
15.
Characteristic enhancement of white LED lamp using low temperature co-fired ceramic-chip on board package
Jae-Kwan Sim, K Ashok, Yong-Ho Ra*, Hong-Chul Im, Byung-Joon Baek, Cheul-Ro Lee
Current Applied Physics, 2012, doi : 10.1016/j.cap.2011.08.008 [Link] IF 2.2
14.
The effect of growth temperature on the coaxial InxGa1-xN/GaN nanowires grown by metalorganic chemical vapor deposition
Ji-Hyeon Park, R Navamathavan, Yong-Ho Ra*, Bo-Ra Yeom, Jae-Kwan Sim, Haeng-Kwun Ahn, Cheul-Ro Lee
Thin solid films, 2012, doi : 10.1016/j.tsf.2012.06.009r [Link] IF 2.0
2011
13.
Different growth behaviors of GaN nanowires grown with Au catalyst and Au+ Ga solid solution nano-droplets on Si (111) substrates by using MOCVD
R Navamathavan, Yong-Ho Ra*, Ki-Young Song, Dong-Wook Kim, Cheul-Ro Lee
Current Applied Physics, 2011, doi : 10.1016/j.cap.2010.06.022 [Link] IF 2.4
12.
The growth behavior of GaN NWs on Si (111) by the dispersion of Au colloid catalyst using pulsed MOCVD
Ji-Hyoen Park, R Navamathavan, Yeom-Bo Ra, Yong-Ho Ra*, Jin-Soo Kim, Cheul-Ro Lee
Journal of Crystal Growth, 2011, doi : 10.1016/j.jcrysgro.2011.01.070 [Link] IF 1.74
11.
Effect of thermal annealing on the structure, morphology, and electrical properties of Mo bottom electrodes for solar cell applications
Jun-Ho Cha, K Ashok, NJ Kissinger, Yong-Ho Ra*, Jae-Kwan Sim, Jin-Soo Kim, Cheul-Ro Lee
Journal of the Korean Physical Society, 2011, doi : x [Link] IF 0.8
10.
Selective area growth of GaN nanowires using metalorganic chemical vapor deposition on nano-patterned Si (111) formed by the etching of nano-sized Au droplets
Ki-Young Song, R Navamathavan, Ji-Hyeon Park, Yeom-Bo Ra, Yong-Ho Ra*, Jin-Soo Kim, Cheul-Ro Lee
Thin solid films, 2011, doi : 10.1016/j.tsf.2011.06.083 [Link] IF 2.0
2010
9.
The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD
Yong-Ho Ra*, R Navamathavan, Young-Min Lee, Dong-Wook Kim, Jin-Soo Kim, In-Hwan Lee, Cheul-Ro Lee
Journal of Crystal Growth, 2010, doi : 10.1016/j.jcrysgro.2009.12.056 [Link] IF 1.7
8.
Improvements in Optical Power and Emission Angle of Blue Light Emitting Diodes Using Patterned Sapphire Substrates with Low Threading Dislocation Densities
Seong-Muk Jeong, Suthan Kissinger, Yong-Ho Ra*, Seok-Hyo Yun, Dong-Wook Kim, Seung Jae Lee, Haeng-Keun Ahn, Jin-Soo Kim, Cheul-Ro Lee
Japanese Journal of Applied Physics, 2010, doi : 10.1143/JJAP.49.04DH02 [Link] IF 1.3
7.
Effect of H2 carrier gas on the growth of GaN nanowires on Si (111) substrates by metalorganic chemical vapor deposition
Yong-Ho Ra*, Rangaswamy Navamathavan, Jun-Ho Cha, Ki-Young Song, Hong-Chul Lim, Ji-Hyeon Park, Dong-Wook Kim, Cheul-Ro Lee
Japanese Journal of Applied Physics, 2010, doi : 10.1143/JJAP.49.045004 [Link] IF 1.3
6.
Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures
Seok-Hyo Yun, Yong-Ho Ra*, Young-Min Lee, Ki-Young Song, Jun-Ho Cha, Hong-Chul Lim, Dong-Wook Kim, NJ Suthan Kissinger, Cheul-Ro Lee
Journal of Crystal Growth, 2010, doi :10.1016/j.jcrysgro.2010.04.041 [Link] IF 1.7
5.
Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si (111) by using metalorganic chemical vapor deposition
Seok-Hyo Yun, Suthan Kissinger, Don Wook Kim, Jun-Ho Cha, Yong-Ho Ra*, Cheul-Ro Lee
Journal of Materials Research, 2010, doi : 10.1557/JMR.2010.0219 [Link] IF 2.3
4.
Highly uniform characteristics of GaN nanorods grown on Si (111) by metalorganic chemical vapor deposition
Yong-Ho Ra*, Rangaswamy Navamathavan, Ji-Hyeon Park, Ki-Young Song, Young-Min Lee, Dong-Wook Kim, Baek Byung Jun, Cheul-Ro Lee
Japanese Journal of Applied Physics, 2010, doi : 10.1143/JJAP.49.091003 [Link] IF 1.3
2009
3.
Semiconductors, dielectrics, and organic materials-GaN Nanowires with Au+ Ga Solid Solution Grown on an Si (111) Substrate by Metalorganic Chemical Vapor Deposition
Eun-Su Jang, Yong-Ho Ra*, Young-Min Lee, Seok-Hyo Yun, Dong-Wook Kim, R Navamathavan, Jin-Soo Kim, In-Hwan Lee, Cheul-Ro Lee
Japanese Journal of Applied Physics, 2009, doi : x IF 1.14
2.
GaN nanowires with Au+ Ga solid solution grown on an Si (111) substrate by metalorganic chemical vapor deposition
Eun-Su Jang, Yong-Ho Ra*, Young-Min Lee, Seok-Hyo Yun, Dong-Wook Kim, R Navamathavan, Jin-Soo Kim, In-Hwan Lee, Cheul-Ro Lee
Japanese journal of applied physics, 2009, doi : 10.1143/JJAP.48.091001 [Link] IF 1.14
1.
Effects of the formation temperature of Au+ Ga solid solution droplets on the growth behaviors of GaN nanowires on Si (111) by using MOCVD
Cheul-Ro Lee, Eun-Su Jang, Yong-Ho Ra*, Young-Min Lee, Heon Song, Dong-Wook Kim, R Navamathavan, Jin-Soo Kim, In-Hwan Lee
Journal of the Korean Physical Society, 2009, doi : 10.3938/jkps.55.1496 [Link] IF 0.8
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